CSD18532NQ5B
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Specification
高度 | 1 mm |
Id-连续漏极电流 | 151 A |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 10 V |
工作温度范围 | - 55 C~+ 150 C |
Qg-栅极电荷 | 49 nC |
Pd-功率耗散 | 156 W |
Vds-漏源极击穿电压 | 60 V |
宽度 | 5 mm |
封装 | VSON-CLIP-8 |
Rds On-漏源导通电阻 | 3.4 mOhms |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
长度 | 6 mm |
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