CSD18542KCS
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Specification
Qg-栅极电荷 | 44 nC |
高度 | 16.51 mm |
Rds On-漏源导通电阻 | 4 mOhms |
长度 | 10.67 mm |
宽度 | 4.7 mm |
Id-连续漏极电流 | 170 A |
封装 | TO-220-3 |
安装方式 | Through Hole |
工作温度范围 | - 55 C~+ 175 C |
晶体管极性 | MOSFET |
Pd-功率耗散 | 200 W |
Vds-漏源极击穿电压 | 60 V |
电路数量 | 1 Channel |
Vgs - 栅极-源极电压 | 10 V |
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