CSD18563Q5AT
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Specification
Pd-功率耗散 | 116 W |
Rds On-漏源导通电阻 | 6.8 mOhms |
封装 | SON-8(5x6) |
Id-连续漏极电流 | 100 A |
工作温度范围 | - 55 C~+ 150 C |
长度 | 5.75 mm |
宽度 | 4.9 mm |
Qg-栅极电荷 | 15 nC |
高度 | 1 mm |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
晶体管极性 | NexFET Power MOSFET |
Vds-漏源极击穿电压 | 60 V |
Vgs - 栅极-源极电压 | 10 V |
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