CSD19534KCS
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Specification
Pd-功率耗散 | 118 W |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 100 A |
封装 | TO-220-3 |
宽度 | 4.7 mm |
电路数量 | 1 Channel |
安装方式 | Through Hole |
长度 | 10.67 mm |
工作温度范围 | - 55 C~+ 175 C |
Qg-栅极电荷 | 16.4 nC |
Vgs - 栅极-源极电压 | 20 V |
Rds On-漏源导通电阻 | 16.5 mOhms |
Vds-漏源极击穿电压 | 100 V |
高度 | 16.51 mm |
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CSD19534KCS
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通孔 N 通道 100V 100A(Ta) 118W(Tc) TO-220-3
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