CSD19535KTT
In stock
- CSD19535KTT Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Qg-栅极电荷 | 75 nC |
高度 | 4.7 mm |
Id-连续漏极电流 | 197 A |
封装 | DDPAK/TO-263-3 |
长度 | 9.25 mm |
Rds On-漏源导通电阻 | 3.4 mOhms |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 175 C |
晶体管极性 | MOSFET |
Pd-功率耗散 | 300 W |
Vds-漏源极击穿电压 | 100 V |
宽度 | 10.26 mm |
Vgs - 栅极-源极电压 | 10 V |
Others include "CSD19535KTT" parts
The following parts include 'CSD19535KTT'
CSD19535KTT Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
CSD19535KTT
TI
表面贴装型 N 通道 100V 200A(Ta) 300W(Tc) DDPAK/TO-263-3
Learn More >
-
-
-
CSD19535KTT
TI
表面贴装型 N 通道 100V 200A(Ta) 300W(Tc) DDPAK/TO-263-3
Learn More >
-
-
-
CSD19535KTTT
TI
表面贴装型 N 通道 100V 200A(Ta) 300W(Tc) DDPAK/TO-263-3
Learn More >
-
-
-
CSD19535KTTT
TI
表面贴装型 N 通道 100V 200A(Ta) 300W(Tc) DDPAK/TO-263-3
Learn More >
-
-
-
CSD19535KTTT
TI
表面贴装型 N 通道 100V 200A(Ta) 300W(Tc) DDPAK/TO-263-3
Learn More >
-
-
-
CSD19535KTTT
TI
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R
Learn More >
-
- View All Newest Products from Omron