CSD23202W10T
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Specification
Qg-栅极电荷 | 2.9 nC |
高度 | 0.62 mm |
Id-连续漏极电流 | 2.2 A |
封装 | DSBGA-4(1x1) |
Rds On-漏源导通电阻 | 92 mOhms |
Vgs - 栅极-源极电压 | 6 V |
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
Vds-漏源极击穿电压 | 12 V |
安装方式 | SMD/SMT |
Pd-功率耗散 | 1 W |
工作温度范围 | - 55 C~+ 150 C |
长度 | 1 mm |
宽度 | 1 mm |
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