CSD25202W15T
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Specification
封装 | DSBGA-9 |
高度 | 0.62 mm |
宽度 | 1.5 mm |
Rds On-漏源导通电阻 | 52 mOhms |
Vds-漏源极击穿电压 | 20 V |
工作温度范围 | - 55 C~+ 150 C |
晶体管极性 | MOSFET |
Pd-功率耗散 | 500 mW (1/2 W) |
Qg-栅极电荷 | 5.8 nC |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Vgs - 栅极-源极电压 | - 6 V |
Id-连续漏极电流 | 4 A |
长度 | 1.5 mm |
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