CSD25213W10
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Specification
Rds On-漏源导通电阻 | 67 mOhms |
封装 | DSBGA-4 |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 1.6 A |
Qg-栅极电荷 | 2.2 nC |
高度 | 0.62 mm |
工作温度范围 | - 55 C~+ 150 C |
安装方式 | SMD/SMT |
Pd-功率耗散 | 1 W |
Vds-漏源极击穿电压 | 20 V |
长度 | 1 mm |
宽度 | 1 mm |
Vgs - 栅极-源极电压 | 6 V |
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