CSD25310Q2T
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Specification
晶体管极性 | MOSFET |
封装 | WSON-6(2x2) |
Rds On-漏源导通电阻 | 19.9 mOhms |
Pd-功率耗散 | 2.9 W |
长度 | 2 mm |
宽度 | 2 mm |
电路数量 | 1 Channel |
Qg-栅极电荷 | 4.7 nC |
高度 | 0.75 mm |
Id-连续漏极电流 | 20 A |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 20 V |
Vgs - 栅极-源极电压 | 8 V |
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