CSD25481F4T
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Specification
工作温度范围 | - 55 C~+ 150 C |
Qg-栅极电荷 | 913 pC |
高度 | 0.35 mm |
Rds On-漏源导通电阻 | 800 mOhms |
Pd-功率耗散 | 500 mW (1/2 W) |
封装 | PicoStar-3 |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
长度 | 1 mm |
宽度 | 0.64 mm |
晶体管极性 | FemtoFET MOSFET |
Id-连续漏极电流 | 2.5 A |
Vds-漏源极击穿电压 | 20 V |
Vgs - 栅极-源极电压 | 12 V |
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