CSD83325LT
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Specification
Pd-功率耗散 | 2.3 W |
Id-连续漏极电流 | 8 A |
Vds-漏源极击穿电压 | 12 V |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 150 C |
电路数量 | 2 Channel |
Vgs - 栅极-源极电压 | 10 V |
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 5.9 mOhms |
长度 | 2.2 mm |
宽度 | 1.15 mm |
封装 | 6PicoStar |
Qg-栅极电荷 | 8.4 nC |
高度 | 0.2 mm |
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