CSD85302LT
In stock
- CSD85302LT Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Qg-栅极电荷 | 6 nC |
高度 | 0.22 mm |
封装 | Picostar-4(1.31x1.31) |
Pd-功率耗散 | 1.7 W |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 20 V |
Rds On-漏源导通电阻 | 24 mOhms |
安装方式 | SMD/SMT |
电路数量 | 2 Channel |
Id-连续漏极电流 | 7 A |
长度 | 1.35 mm |
宽度 | 1.35 mm |
Vgs - 栅极-源极电压 | 10 V |
Others include "CSD85302LT" parts
The following parts include 'CSD85302LT'
CSD85302LT Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
CSD85302L
TI
MOSFET - 阵列 2 N 沟道(双)共漏 1.7W 表面贴装型 4-Picostar(1.31x1.31)
Learn More >
-
-
-
CSD85302L
TI
Power MOSFET 4-Pin PicoStar T/R
Learn More >
-
-
-
CSD85302L
TI
MOSFET - 阵列 2 N 沟道(双)共漏 1.7W 表面贴装型 4-Picostar(1.31x1.31)
Learn More >
-
-
-
CSD85302LT
TI
MOSFET - 阵列 2 N 沟道(双)共漏 1.7W 表面贴装型 4-Picostar(1.31x1.31)
Learn More >
-
-
-
CSD85302LT
TI
MOSFET - 阵列 2 N 沟道(双)共漏 1.7W 表面贴装型 4-Picostar(1.31x1.31)
Learn More >
-
-
-
CSD85302LT
TI
Power MOSFET 4-Pin PicoStar T/R
Learn More >
-
- View All Newest Products from Omron