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CSD85312Q3E

Name: CSD85312Q3E
Brand: TI
SKU: R001-CSD85312Q3E-5-H-0000-X-Y
Availability: InStock
Rating: 5 (2 reviews)

Manufacturer:

Mfr. Part #:

CSD85312Q3E

Allchips #:

R001-CSD85312Q3E-5-H-0000-X-Y

Description:

MOSFET - 阵列 2 N 沟道（双）共源 20V 39A 2.5W 表面贴装型 8-VSON（3.3x3.3）

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CSD85312Q3E Details
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Quality Control

TI,CSD85312Q3E is available at Allchips.100% original and new guarantee. If comprehensive data for CSD85312Q3E to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

晶体管极性	MOSFET
Qg-栅极电荷	11.7 nC
高度	1 mm
Id-连续漏极电流	12 A
工作温度范围	- 55 C~+ 150 C
Vds-漏源极击穿电压	20 V
长度	3.3 mm
宽度	3.3 mm
Pd-功率耗散	2.5 W
Rds On-漏源导通电阻	14 mOhms
封装	VSON-8(3.3x3.3)
电路数量	2 Channel
Vgs - 栅极-源极电压	10 V
安装方式	SMD/SMT

	Ship Fee	Lead Time	Processing Time
DHL	$20.00-$40.00(0.50KG)	2-5 days	Shipping fee depend on different zone and country
UPS	$20.00-$45.00(0.50KG)	2-5 days
TNT	$25.00-$65.00(0.50KG)	2-5 days
EMS	$25.00-$45.00(0.50KG)	4-15 days
Air, Sea/air and Sea	$2.00-$3.00(0.10KG)	7-30 days
FedEX	$20.00-$40.00(0.50KG)	3-7 days