CSD86356Q5DT
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Specification
Pd-功率耗散 | 12 W |
Vds-漏源极击穿电压 | 25 V |
Vgs - 栅极-源极电压 | 10 V |
封装 | SON-8 |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 40 A |
Rds On-漏源导通电阻 | 4.5 mOhms |
工作温度范围 | - 55 C~+ 150 C |
Qg-栅极电荷 | 7.9 nC |
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