CSD87313DMST
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Specification
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 5.5 mOhms |
Vds-漏源极击穿电压 | 30 V |
Pd-功率耗散 | 2.7 W |
工作温度范围 | - 55 C~+ 150 C |
Id-连续漏极电流 | 17 A |
Qg-栅极电荷 | 28 nC, 28 nC |
电路数量 | 2 Channel |
Vgs - 栅极-源极电压 | 10 V |
封装 | WSON-8 |
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