CSD87334Q3DT
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Specification
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 30 V |
宽度 | 3.3 mm |
封装 | VSON-8 |
Pd-功率耗散 | 6 W |
Qg-栅极电荷 | 8.3 nC, 8.3 nC |
电路数量 | 2 Channel |
长度 | 3.3 mm |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 8.3 mOhms, 8.3 mOhms |
Vgs - 栅极-源极电压 | 8 V |
Id-连续漏极电流 | 20 A |
晶体管极性 | MOSFET |
高度 | 1 mm |
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