CSD87355Q5DT
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Specification
电路数量 | 2 Channel |
Vgs - 栅极-源极电压 | 10 V |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 30 V |
Qg-栅极电荷 | 13.7 nC, 31.5 nC |
高度 | 1.5 mm |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 150 C |
封装 | LSON-8(5x6) |
Pd-功率耗散 | 12 W |
长度 | 6 mm |
宽度 | 5 mm |
Id-连续漏极电流 | 45 A |
Rds On-漏源导通电阻 | 3.9 mOhms |
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