CSD87381P
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Specification
封装 | 3 mm*2.5 mm |
Qg-栅极电荷 | 3.9 nC, 8.9 nC |
高度 | 0.48 mm |
Vds-漏源极击穿电压 | 30 V |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 150 C |
Id-连续漏极电流 | 8 A |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 8 V |
电路数量 | 2 Channel |
Rds On-漏源导通电阻 | 16.3 mOhms, 7.6 mOhms |
Pd-功率耗散 | 4 W |
长度 | 3 mm |
宽度 | 2.5 mm |
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