CSD87503Q3ET
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Specification
Qg-栅极电荷 | 42.8 nC, 42.8 nC |
封装 | VSON-8 |
安装方式 | SMD/SMT |
Vgs - 栅极-源极电压 | 20 V |
晶体管极性 | MOSFET |
Pd-功率耗散 | 15.6 W |
工作温度范围 | - 55 C~+ 150 C |
电路数量 | 2 Channel |
Rds On-漏源导通电阻 | 17.3 mOhms |
Id-连续漏极电流 | 10 A |
Vds-漏源极击穿电压 | 30 V |
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