CSD88539NDT
In stock
- CSD88539NDT Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
电路数量 | 2 Channel |
Qg-栅极电荷 | 7.2 nC |
高度 | 1.75 mm |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 28 mOhms |
Pd-功率耗散 | 2.1 W |
Id-连续漏极电流 | 11.7 A |
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
长度 | 4.9 mm |
宽度 | 3.9 mm |
封装 | SOIC-8 |
Others include "CSD88539NDT" parts
The following parts include 'CSD88539NDT'
CSD88539NDT Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
CSD88539NDT
TI
CSD88539ND 60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND
Learn More >
-
-
-
CSD88539NDT
TI
CSD88539ND 60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND
Learn More >
-
-
-
CSD88539NDT
TI
CSD88539ND 60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND
Learn More >
-
-
-
CSD88539ND
TI
Mosfet Array 2 N-Channel (Dual) 60V 15A 2.1W Surface Mount 8-SOIC
Learn More >
-
-
-
CSD88539ND
TI
Mosfet Array 2 N-Channel (Dual) 60V 15A 2.1W Surface Mount 8-SOIC
Learn More >
-
- View All Newest Products from Omron