CSD88584Q5DCT
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Specification
Pd-功率耗散 | 12 W |
电路数量 | 2 Channel |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 150 C |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 680 uOhms |
封装 | VSON-CLIP-22 |
Qg-栅极电荷 | 137 nC |
Vds-漏源极击穿电压 | 40 V |
Vgs - 栅极-源极电压 | 20 V |
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