LM211QDRG4Q1
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Specification
Vos - 输入偏置电压 | 100 nA |
高度 | 1.58 mm |
长度 | 4.9 mm |
宽度 | 3.91 mm |
资格等级 | AEC-Q100 |
电源电压 | 3.5 V~30 V |
响应时间 | 165 ns |
安装方式 | SMD/SMT |
Ib - 输入偏流 | 100 nA |
封装 | SOIC-8 |
电源电流 | 12.5 mA |
输出类型 | Open Collector and Emitter |
传播延迟时间 | 165 ns |
比较器类型 | Voltage Comparator |
电路数量 | 1 Channel |
工作温度范围 | - 40 C~+ 125 C |
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