LT1013DIDR
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Specification
Ib - 输入偏流 | 30 nA |
压摆率(SR) | 0.4 V/us |
电源电压 | 4 V~44 V |
高度 | 1.58 mm |
安装方式 | SMD/SMT |
GBP-增益带宽积 | 1 MHz |
长度 | 4.9 mm |
宽度 | 3.91 mm |
工作温度范围 | - 55 C~+ 125 C |
电源电流 | 350 uA |
放大器类型 | Low Offset Voltage Amplifier |
封装 | SOIC-8 |
CMRR - 共模抑制比 | 97 dB to 114 dB |
电路数量 | 2 Channel |
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