THS3062D
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Specification
封装 | SOIC-8 |
工作温度范围 | -40°C~85°C |
Ib - 输入偏流 | 20 uA |
压摆率(SR) | 7000V/µs |
高度 | 1.58 mm |
电源电压 | 10 V~30 V |
GBP-增益带宽积 | 2.2GHz |
电源电流 | 8.3 mA |
长度 | 4.9 mm |
宽度 | 3.91 mm |
安装方式 | SMD/SMT |
CMRR - 共模抑制比 | 60 dB to 72 dB |
电路数量 | 2 Channel |
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