THS4150CDR
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Specification
电路数量 | 1 Channel |
电源电压 | 4 V~33 V |
压摆率(SR) | 650V/µs |
封装 | SOIC-8 |
每个通道的输出电流 | 85 mA |
工作温度范围 | - 40 C~+ 85 C |
输出类型 | 差分 |
放大器类型 | 差分 |
安装方式 | SMD/SMT |
Ib - 输入偏流 | 15 uA |
CMRR - 共模抑制比 | 75 dB to 83 dB |
电源电流 | 17.5 mA |
GBP-增益带宽积 | 340MHz |
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