TL082IDRQ1
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Specification
封装 | SOIC-8 |
GBP-增益带宽积 | 3MHz |
放大器类型 | J-FET |
工作温度范围 | -40°C~85°C |
安装方式 | 表面贴装型 |
压摆率(SR) | 13V/µs |
电路数量 | 2 |
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