TLE2021IDR
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Specification
封装 | SOIC-8 |
工作温度范围 | - 40 C~+ 85 C |
高度 | 1.58 mm |
压摆率(SR) | 0.65V/µs |
CMRR - 共模抑制比 | 85 dB to 110 dB |
电源电流 | 200 uA |
电源电压 | 4 V~40 V |
GBP-增益带宽积 | 1.2 MHz |
放大器类型 | Low Offset Amplifier |
电路数量 | 1 Channel |
Ib - 输入偏流 | 70 nA |
长度 | 4.9 mm |
宽度 | 3.91 mm |
安装方式 | SMD/SMT |
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