TLE2061IDR
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Specification
压摆率(SR) | 3.4V/µs |
封装 | SOIC-8 |
GBP-增益带宽积 | 1.8 MHz |
电源电压 | +/- 3.5 V to +/- 18 V |
长度 | 4.9 mm |
宽度 | 3.91 mm |
电路数量 | 1 Channel |
安装方式 | 表面贴装型 |
电源电流 | 290 uA |
CMRR - 共模抑制比 | 72 dB to 90 dB |
高度 | 1.58 mm |
放大器类型 | High Output Current Amplifier |
工作温度范围 | - 40 C~+ 85 C |
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