TLV271IDR
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Specification
工作温度范围 | - 40 C~+ 125 C |
电路数量 | 1 Channel |
放大器类型 | CMOS |
GBP-增益带宽积 | 3 MHz |
电源电压 | 2.7 V~16 V |
安装方式 | 表面贴装型 |
CMRR - 共模抑制比 | 65 dB to 80 dB |
封装 | SOIC-8 |
每个通道的输出电流 | 7 mA |
电源电流 | 550 uA |
压摆率(SR) | 2.6 V/us |
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