TLV272IDR
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Specification
放大器类型 | CMOS |
工作温度范围 | -40°C~125°C |
压摆率(SR) | 2.6V/µs |
安装方式 | 表面贴装型 |
封装 | SOIC-8 |
GBP-增益带宽积 | 3MHz |
输出类型 | 满摆幅 |
电路数量 | 2 |
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