TDM3420TR
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Specification
封装 | SOT-23-6 |
晶体管极性 | N沟道 |
Vgs - 栅极-源极电压 | 3V @ 250uA |
Vds-漏源极击穿电压 | 30V |
Pd-功率耗散 | 1.6W |
Id-连续漏极电流 | 6.3A |
Rds On-漏源导通电阻 | 23mΩ @ 8A,10V |
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TDM3420 TR
Techcode
TDM3420 TR MOS(场效应管) SOT23-6
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