2SK3320-BL(TE85L,F
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Specification
RoHS | yes |
Installation style | SMD/SMT |
Package / case | USV-5 |
Transistor polarity | N-Channel |
Configuration | Dual |
Vds - Drain-Source Breakdown Voltage | 10 V |
Vgs - gate-source breakdown voltage | - 30 V |
Leakage-source current at Vgs = 0 | 6 mA |
Id - continuous drain current | 14 mA |
Pd - Power Dissipation | 200 mW |
Series | 2SK3320 |
Gate / source cut-off voltage | - 1.5 V |
Factory packing quantity | 3000 |
Types | JFET |
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