2SK879-GR(TE85L,F)
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Specification
RoHS | yes |
Installation style | SMD/SMT |
Package / case | SC-70-3 |
Transistor polarity | N-Channel |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 10 V |
Vgs - gate-source breakdown voltage | - 30 V |
Leakage-source current at Vgs = 0 | 2.6 mA |
Id - continuous drain current | 6.5 mA |
Pd - Power Dissipation | 100 mW |
Series | 2SK879 |
Gate / source cut-off voltage | - 5 V |
Factory packing quantity | 3000 |
Types | JFET |
Unit weight | 6.200 mg |
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