2N4858A
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Specification
RoHS | yes |
Installation style | Through Hole |
Package / case | TO-18 |
Transistor polarity | N-Channel |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 40 V |
Vgs - gate-source breakdown voltage | 20 V |
Leakage-source current at Vgs = 0 | 8 mA to 80 mA |
Id - continuous drain current | 5 mA |
Rds On - Drain-Source On-Resistance | 60 Ohms |
Pd - Power Dissipation | 360 mW |
The maximum working temperature | + 200 C |
Series | 2N4858 |
Gate / source cut-off voltage | 800 mV to 4 V |
Maximum drain / gate voltage | 40 V |
Minimum working temperature | - 65 C |
Factory packing quantity | 2000 |
Technology | Si |
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