C2M0040120D
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Specification
Pd-功率耗散 | 330 W |
Rds On-漏源导通电阻 | 40 mOhms |
Vds-漏源极击穿电压 | 1.2 kV |
工作温度范围 | - 55 C~+ 150 C |
晶体管极性 | Silicon Carbide Power MOSFET |
Id-连续漏极电流 | 60 A |
Qg-栅极电荷 | 283 nC |
高度 | 21.1 mm |
安装方式 | Through Hole |
Vgs - 栅极-源极电压 | 25 V, - 10 V |
封装 | TO-247-3 |
长度 | 5.21 mm |
宽度 | 16.13 mm |
电路数量 | 1 Channel |
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