C3M0065090J-TR
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Specification
RoHS | yes |
Technology | SiC |
Installation style | SMD/SMT |
Package / case | TO-263-7 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 900 V |
Id - continuous drain current | 35 A |
Rds On - Drain-Source On-Resistance | 90 mOhms |
Vgs th - gate-source threshold voltage | 1.8 V |
Vgs - gate-source voltage | - 8 V, + 18 V |
Qg - gate charge | 30 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 5 ns |
Forward transconductance - minimum | 11.6 S |
Pd - Power Dissipation | 113 W |
Product | Power MOSFET |
Rise Time | 6.5 ns |
Factory packing quantity | 800 |
Types | Silicon Carbide MOSFET |
Typical shutdown delay time | 15 ns |
Typical turn-on delay time | 7.2 ns |
Unit weight | 1.600 g |
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