C3M0350120J
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Specification
封装 | TO-263-7 |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 7.2 A |
Vgs - 栅极-源极电压 | - 8 V, 19 V |
Qg-栅极电荷 | 13 nC |
Pd-功率耗散 | 40.8 W |
Vds-漏源极击穿电压 | 1200 V |
Rds On-漏源导通电阻 | 455 mOhms |
安装方式 | Through Hole |
工作温度范围 | - 55 C~+ 150 C |
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