C3M0280090D
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Specification
晶体管极性 | Silicon Carbide MOSFET |
Vgs - 栅极-源极电压 | 2.1 V |
封装 | TO-247-3 |
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 54 W |
Vds-漏源极击穿电压 | 900 V |
Rds On-漏源导通电阻 | 280 mOhms |
Id-连续漏极电流 | 11.5 A |
Qg-栅极电荷 | 9.5 nC |
高度 | 21.1 m |
长度 | 16.13 mm |
宽度 | 5.21 mm |
电路数量 | 1 Channel |
安装方式 | Through Hole |
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