C3M0280090J
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Specification
Rds On-漏源导通电阻 | 385 mOhms |
Pd-功率耗散 | 50 W |
封装 | TO-263-7 |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 900 V |
Id-连续漏极电流 | 11 A |
Vgs - 栅极-源极电压 | 18 V, - 8 V |
晶体管极性 | Silicon Carbide MOSFET |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Qg-栅极电荷 | 9.5 nC |
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