IXXH50N60B3D1
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Specification
RoHS | yes |
Technology | Si |
Package / case | TO-247-3 |
Installation style | Through Hole |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 1.55 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 120 A |
Pd - Power Dissipation | 600 W |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Series | IXXH50N60 |
Continuous collector current | 120 A |
Collector maximum continuous current Ic | 200 A |
Gate-emitter leakage current | 100 nA |
Height | 21.45 mm |
Length | 16.24 mm |
Range of working temperature | - 55 C to + 175 C |
Factory packing quantity | 30 |
Width | 5.3 mm |
Unit weight | 38 g |
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