BC 850CW H6327
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Specification
RoHS | yes |
Installation style | SMD/SMT |
Package / case | SOT-323-3 |
Transistor polarity | NPN |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 45 V |
Collector-base voltage VCBO | 50 V |
Emitter-base voltage VEBO | 6 V |
Collector - emitter saturation voltage | 200 mV |
Maximum DC collector current | 200 mA |
Gain Bandwidth Product fT | 250 MHz |
The maximum working temperature | + 150 C |
Series | BC850 |
Continuous collector current | 100 mA |
DC collector / Base Gain hfe Min | 420 |
DC current gain hFE maximum | 800 |
Minimum working temperature | - 65 C |
Pd - Power Dissipation | 330 mW |
Factory packing quantity | 3000 |
Unit weight | 5 mg |
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