IRGP4640-EPBF
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Specification
Vgs - 栅极-源极电压 | 40ns/105ns |
Pd-功率耗散 | 250W |
封装 | TO-247AD |
Vds-漏源极击穿电压 | 600V |
工作温度范围 | -40°C~175°C(TJ) |
安装方式 | 通孔 |
晶体管极性 | 分立半导体产品,晶体管-UGBT,MOSFET-单 |
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