BCR08PNH6433XTMA1
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Specification
集电极—发射极最大电压 VCEO | 300mV@500µA,10mA |
Pd-功率耗散 | 250mW |
封装 | SOT-363 |
晶体管极性 | 1个NPN,1个PNP-预偏压式(双) |
集电极电流Ic | 100mA |
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BCR08PNH6433XTMA1
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Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 170MHz 250mW Surface
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