LBC857CLT1G
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Specification
晶体管极性 | PNP |
Pd-功率耗散 | 300mW |
集电极电流Ic | 100mA |
封装 | SOT-23-3 |
集电极—发射极最大电压 VCEO | 45V |
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LBC857CLT1G
LRC
PNP Ic=-100mA,hfe=420~800(Ic=-2mA,Vce=-5V) Vceo=-50V LBC857CLT1G
Learn More >
-
-
-
LBC857CLT1G
LRC
PNP Ic=-100mA,hfe=420~800(Ic=-2mA,Vce=-5V) Vceo=-50V LBC857CLT1G
Learn More >
-
-
-
LBC857CLT1G
LRC
PNP Ic=-100mA,hfe=420~800(Ic=-2mA,Vce=-5V) Vceo=-50V LBC857CLT1G
Learn More >
-
-
-
LBC857CLT1G
LRC
PNP Ic=-100mA,hfe=420~800(Ic=-2mA,Vce=-5V) Vceo=-50V LBC857CLT1G
Learn More >
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