BFP 520F H6327
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | Si |
Transistor polarity | NPN |
DC collector / Base Gain hfe Min | 70 |
Collector - Emitter maximum voltage VCEO | 2.5 V |
Emitter-base voltage VEBO | 1 V |
Continuous collector current | 40 mA |
The maximum working temperature | + 150 C |
Configuration | Single Dual Emitter |
Installation style | SMD/SMT |
Package / case | TSFP-4 |
Trademark | Infineon Technologies |
Minimum working temperature | - 65 C |
working frequency | 45 GHz |
Pd - Power Dissipation | 100 mW |
Series | BFP520 |
Factory packing quantity | 3000 |
Types | RF Bipolar Small Signal |
Part number aliases | BFP520 BFP520FH6327XTSA1 SP000745282 |
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