BFP 650 H6327
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | SiGe |
Collector - Emitter maximum voltage VCEO | 4 V |
Emitter-base voltage VEBO | 1.2 V |
Continuous collector current | 150 mA |
Installation style | SMD/SMT |
Package / case | SOT-343 |
Trademark | Infineon Technologies |
working frequency | 37 GHz |
Pd - Power Dissipation | 500 mW (1/2 W) |
Series | BFP650 |
Factory packing quantity | 3000 |
Types | RF Silicon Germanium |
Part number aliases | BFP650 BFP650H6327XTSA1 SP000750406 |
Unit weight | 31 mg |
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