BSC004NE2LS5ATMA1
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Specification
封装 | TDSON-8-FL |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 25 V |
Id-连续漏极电流 | 479 A |
Rds On-漏源导通电阻 | 0.54 mOhms |
Vgs - 栅极-源极电压 | - 20 V, + 20 V |
Pd-功率耗散 | 188 W |
电路数量 | 1 Channel |
Qg-栅极电荷 | 238 nC |
工作温度范围 | - 55 C~+ 175 C |
安装方式 | SMD/SMT |
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BSC004NE2LS5ATMA1
Infineon
MOSFET TRENCH <= 40V
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BSC004NE2LS5ATMA1
Infineon
MOSFET TRENCH <= 40V
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BSC004NE2LS5ATMA1
Infineon
MOSFET TRENCH <= 40V
Learn More >
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BSC004NE2LS5ATMA1
Infineon
MOSFET TRENCH <= 40V
Learn More >
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BSC004NE2LS5ATMA1
Infineon
MOSFET TRENCH <= 40V
Learn More >
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