BSC016N06NSATMA1
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Specification
晶体管极性 | MOSFET |
Pd-功率耗散 | 139 W |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Qg-栅极电荷 | 95 nC |
高度 | 1.27 mm |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
长度 | 5.9 mm |
宽度 | 5.15 mm |
Rds On-漏源导通电阻 | 1.4 mOhms |
Id-连续漏极电流 | 100 A |
封装 | PowerTDFN-8 |
工作温度范围 | - 55 C~+ 150 C |
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