BSC025N03MSGATMA1
In stock
- BSC025N03MSGATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - continuous drain current | 40 A |
Rds On - Drain-Source On-Resistance | 6.7 mOhms |
Vgs th - gate-source threshold voltage | 1 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 27 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 2.4 ns |
Forward transconductance - minimum | 28 S |
Height | 1.27 mm |
Length | 5.9 mm |
Pd - Power Dissipation | 35 W |
Rise Time | 3 ns |
Series | OptiMOS 3M |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 18 ns |
Typical turn-on delay time | 4.3 ns |
Width | 5.15 mm |
Unit weight | 605 mg |
Others include "BSC025N03MSGATMA1" parts
The following parts include 'BSC025N03MSGATMA1'
BSC025N03MSGATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSC025N03MSGATMA1
Infineon
表面贴装型 N 通道 30V 23A(Ta). 100A(Tc) 2.5W(Ta),83W(Tc) PG-TDSON-8-1
Learn More >
-
-
-
BSC025N03MSGATMA1
Infineon
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
Learn More >
-
-
-
BSC025N03MSGATMA1
Infineon
表面贴装型 N 通道 30V 23A(Ta). 100A(Tc) 2.5W(Ta),83W(Tc) PG-TDSON-8-1
Learn More >
-
- View All Newest Products from Omron