BSC026N08NS5ATMA1
In stock
- BSC026N08NS5ATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Vds-漏源极击穿电压 | 80 V |
Rds On-漏源导通电阻 | 3.9 mOhms |
晶体管极性 | MOSFET |
Pd-功率耗散 | 156 W |
工作温度范围 | - 55 C~+ 150 C |
安装方式 | SMD/SMT |
Qg-栅极电荷 | 74 nC |
高度 | 1.27 mm |
电路数量 | 1 Channel |
Id-连续漏极电流 | 100 A |
封装 | PG-TDSON-8 |
长度 | 5.9 mm |
宽度 | 5.15 mm |
Vgs - 栅极-源极电压 | 10 V |
Others include "BSC026N08NS5ATMA1" parts
The following parts include 'BSC026N08NS5ATMA1'
BSC026N08NS5ATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSC026N08NS5ATMA1
Analog Devices Inc
Learn More >
-
-
-
BSC026N08NS5ATMA1
Infineon
Trans MOSFET N-CH 80V 23A 8-Pin TDSON EP T/R
Learn More >
-
-
-
BSC026N08NS5ATMA1
Infineon
MOSFET N-CH 80V 23A 8TDSON
Learn More >
-
-
-
BSC026N08NS5ATMA1
Infineon
MOSFET N-CH 80V 23A 8TDSON
Learn More >
-
-
-
BSC026N08NS5ATMA1
Infineon
Trans MOSFET N-CH 80V 23A 8-Pin TDSON EP T/R
Learn More >
-
-
-
BSC026N08NS5ATMA1
Infineon
Trans MOSFET N-CH 80V 23A 8-Pin TDSON EP T/R
Learn More >
-
- View All Newest Products from Omron